|
Crystal Materials |
99,996% of Al2O3,High Purity, Monocrystalline, Al2O3 |
|
Crystal quality |
Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent |
|
Diameter |
2inch |
3inch |
4inch |
5inch ～ 7inch |
|
50.8± 0.1mm |
76.2±0.2mm |
100±0.3mm |
In accordance with the provisions of
standard production |
|
Thickness |
430±15µm
330±15µm
250±15µm |
550±15µm
500±15µm
430±15µm |
650±20µm
550±20µm
500±20µm |
In accordance with the provisions of
standard production |
|
Orientation |
C- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle |
|
Primary flat length |
16.0±0.8mm |
22.0±1.0 mm |
32.5±1.5 mm |
In accordance with the provisions of
standard production |
|
Primary flat Orientation |
A-plane (1 1-2 0 ) ± 0.2° |
|
TTV |
≤10µm |
≤15µm |
≤20µm |
≤30µm |
|
LTV |
≤10µm |
≤15µm |
≤20µm |
≤30µm |
|
TIR |
≤10µm |
≤15µm |
≤20µm |
≤30µm |
|
BOW |
≤10µm |
≤15µm |
≤20µm |
≤30µm |
|
Warp |
≤10µm |
≤15µm |
≤20µm |
≤30µm |
|
Front Surface |
Epi-Polished (Ra< 0.2nm) |
|
Back Surface |
Fine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm) |
|
Cleaning/packaging |
Class 100 clean room cleaning, vacuum packaging derived nitrogen |
|
Note |
We can provide high-quality sapphire substrate wafer according to customers' specific requirement |
